This resulted in a diminished perform purpose along with the development of the Schottky contact concerning the BrGO and n-style Si substrate. Because of the upper proportion of B-C and B-C3 bonding inside the BrGO/Si machine than that inside the rGO/Si, the lessened Schottky barrier peak on the BrGO/n-Si vertical https://www.directivepublications.org/journal-of-applied-nanoscience/