Previous to the deposition with the Er:Al2O3 active materials, the coupling circuit, i.e., the strip waveguides, the mode transition tapers and also the mode converters were covered with a 800 nm thick layer of hydrogen silsesquioxane (HSQ, n ~one.forty five) to forestall their coating with the Energetic substance, as shown https://johnt752luc8.wikiannouncement.com/user